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| 2SA1037AK PNP Silicon Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free A L General Purpose Transistor SC-59 Dim A 1 Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 FEATURES S 2 3 Top View B B C D G H J K n RoHS Compliant Product. Excellent hFE linearity. Complments the 2SC2412K. H G D n n C J K L S COLLECTOR MARKING : FP, FQ, FR * BASE EMITTER O All Dimension in mm MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Parameter Value -60 -50 -6 -150 200 -55~150 Units V V V mA mW *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -60 -50 -6 -0.1 -0.1 120 560 -0.5 140 4 5 V MHz pF TYP MAX UNIT V V V A A Ic=-50A, IE=0 Ic=-1uA,IB=0 IE=-50A, IC=0 VCB=-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1mA IC=-50mA,IB=-5mA VCE=-12V,IC=-2mA,f=30MHz VCB=-12V,IE=0,f=1MHz CLASSIFICATION OF Rank Range http://www.SeCoSGmbH.com hFE P 120 - 270 Q 180 - 390 R 270 - 560 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SA1037AK Elektronische Bauelemente PNP Silicon General Purpose Transistor Electrical characteristic curves -50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 COLLECTOR CURRENT : IC (mA) Ta=100C 25C -40C VCE= -6V -10 -35.0 Ta=25C -100 -31.5 -28.0 -24.5 Ta=25C -8 -80 -6 -21.0 -17.5 -60 -500 -450 -400 -350 -300 -250 -200 -4 -14.0 -10.5 -40 -150 -100 -2 -7.0 -3.5A -20 -50A IB=0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 -0.4 -0.8 -1.2 IB=0 -1.6 -2.0 0 -1 -2 -3 -4 -5 COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) Ta=25C VCE= -5V -3V -1V DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=100C 25C -1 Ta=25C DC CURRENT GAIN : hFE -0.5 200 -40C 200 100 -0.2 IC/IB=50 100 -0.1 20 10 50 50 VCE= -6V -5 -10 -20 -50 -100 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 -0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25C VCE= -12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -1 1000 20 Cib 10 500 Ta=25C f=1MHz IE=0A IC=0A Co b -0.2 Ta=100C 25C -40C 200 5 -0.1 100 2 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 50 0.5 1 2 5 10 20 50 100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 01-Jun-2002 Rev. A Page 2 of 2 |
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